SIE860DF-T1-E3
MOSFET N-CH 30V 60A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel MOSFET, part number SIE860DF-T1-E3, from the TrenchFET® series. This device offers a 30V drain-to-source voltage (Vdss) and a continuous drain current of 60A at 25°C (Tc). Key specifications include a maximum on-resistance (Rds On) of 2.1mOhm at 21.7A and 10V (Vgs), and a gate charge (Qg) of 105 nC at 10V. The input capacitance (Ciss) is a maximum of 4500 pF at 15V (Vds). This surface mount component is housed in a 10-PolarPAK® (M) package, supplied on tape and reel. Power dissipation is rated at 104W (Tc) and 5.2W (Ta). It operates across a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±20V. The threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA (Id). This MOSFET is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (M) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 21.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (M) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 15 V |