SIE854DF-T1-GE3
MOSFET N-CH 100V 60A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SIE854DF-T1-GE3, offers a 100V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C (Tc). This device features a low on-resistance of 14.2mOhm maximum at 13.2A and 10V Vgs. Key electrical parameters include a gate charge (Qg) of 75 nC maximum at 10V and input capacitance (Ciss) of 3100 pF maximum at 50V. The SIE854DF-T1-GE3 is housed in a 10-PolarPAK® (L) surface mount package, suitable for demanding applications. With a maximum power dissipation of 125W at 25°C (Tc) and 5.2W at 25°C (Ta), it operates across a temperature range of -55°C to 150°C. This component is utilized in industrial, automotive, and power supply applications where high efficiency and power handling are critical.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (L) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.2mOhm @ 13.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (L) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 50 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
