SIE854DF-T1-E3
MOSFET N-CH 100V 60A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIE854DF-T1-E3 is an N-Channel Power MOSFET designed for high-performance applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C (Tc). The device exhibits a low on-resistance of 14.2mOhm maximum at 13.2A and 10V gate drive. Key characteristics include a gate charge (Qg) of 75 nC maximum at 10V and an input capacitance (Ciss) of 3100 pF maximum at 50V. With a maximum power dissipation of 125W (Tc), this MOSFET is suitable for demanding power conversion and management tasks. It is supplied in a 10-PolarPAK® (L) surface mount package and is available on tape and reel. The operating temperature range is -55°C to 150°C. This component finds application in sectors such as automotive, industrial power, and computing.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (L) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.2mOhm @ 13.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (L) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 50 V |