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SIE848DF-T1-GE3

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SIE848DF-T1-GE3

MOSFET N-CH 30V 60A 10POLARPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SIE848DF-T1-GE3 is an N-Channel TrenchFET® MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 60A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 1.6mOhm at 25A and 10V, contributing to reduced conduction losses. Power dissipation capabilities are rated at 5.2W (Ta) and 125W (Tc). Key characteristics include a maximum gate charge (Qg) of 138 nC at 10V and an input capacitance (Ciss) of 6100 pF at 15V. It supports drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. The threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA. The SIE848DF-T1-GE3 is supplied in a 10-PolarPAK® (L) surface mount package, presented on tape and reel. This MOSFET is suitable for use in automotive, industrial, and computing power management systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case10-PolarPAK® (L)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs1.6mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package10-PolarPAK® (L)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6100 pF @ 15 V

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