SIE848DF-T1-E3
MOSFET N-CH 30V 60A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIE848DF-T1-E3 TrenchFET® N-Channel Power MOSFET. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C (Tc). With a maximum on-resistance of 1.6mOhm at 25A and 10V Vgs, it is designed for efficient power handling. The MOSFET is packaged in a 10-PolarPAK® (L) for surface mounting and is supplied on tape and reel. Key parameters include a gate charge of 138 nC (max) at 10V Vgs and input capacitance of 6100 pF (max) at 15V Vds. Power dissipation is rated at 5.2W (Ta) and 125W (Tc). This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (L) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (L) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 138 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 15 V |