SIE844DF-T1-GE3
MOSFET N-CH 30V 44.5A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIE844DF-T1-GE3 is a 30V N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a maximum continuous drain current of 44.5A at a case temperature of 25°C and a low on-resistance of 7mOhm at 12.1A and 10V Vgs. The SIE844DF-T1-GE3 offers a gate charge of 44 nC at 10V, contributing to its switching efficiency. With a power dissipation of 25W at 25°C (Tc), it is suitable for demanding thermal environments. The 10-PolarPAK® (U) package facilitates efficient heat transfer for surface mounting. This component is utilized in industries such as automotive, industrial power supplies, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (U) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 12.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (U) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 15 V |