SIE832DF-T1-GE3
MOSFET N-CH 40V 50A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix presents the SIE832DF-T1-GE3, an N-Channel Power MOSFET designed for demanding applications. This component features a 40V Drain-to-Source Voltage (Vds) and a continuous drain current (Id) of 50A at 25°C (Tc). The TrenchFET® series technology ensures low on-resistance, with a maximum Rds(on) of 5.5mOhm at 14A and 10V gate drive. Key electrical parameters include a high gate charge (Qg) of 77 nC at 10V and input capacitance (Ciss) of 3800 pF at 20V.
The SIE832DF-T1-GE3 offers robust power handling capabilities, with a maximum power dissipation of 5.2W (Ta) and 104W (Tc). It operates across a wide temperature range of -55°C to 150°C (TJ). The device is housed in a 10-PolarPAK® (S) surface-mount package and supplied on tape and reel for efficient automated assembly. This MOSFET is suitable for use in power management, automotive, and industrial systems requiring high efficiency and reliable performance.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (S) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (S) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 20 V |
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