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SIE832DF-T1-E3

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SIE832DF-T1-E3

MOSFET N-CH 40V 50A 10POLARPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix SIE832DF-T1-E3 is an N-Channel MOSFET designed for demanding power applications. Featuring a 40V drain-source voltage and a continuous drain current capability of 50A at 25°C (Tc), this device excels in high-power switching and load management. Its low on-resistance of 5.5mOhm at 14A and 10V gate drive ensures efficient operation with minimal power loss. The TrenchFET® technology employed in its design contributes to its robust performance and thermal management, with a maximum power dissipation of 104W (Tc). The SIE832DF-T1-E3 is housed in a 10-PolarPAK® (S) surface mount package, suitable for automated assembly processes. Key electrical characteristics include a gate charge (Qg) of 77 nC (max) at 10V and input capacitance (Ciss) of 3800 pF (max) at 20V. The operating temperature range is -55°C to 150°C (TJ). This component is widely utilized in automotive, industrial power supplies, and energy storage systems. The material is supplied on tape and reel for high-volume manufacturing.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case10-PolarPAK® (S)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs5.5mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package10-PolarPAK® (S)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3800 pF @ 20 V

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