SIE822DF-T1-GE3
MOSFET N-CH 20V 50A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SIE822DF-T1-GE3 is an N-Channel MOSFET from the TrenchFET® series, designed for high-efficiency power conversion. This surface-mount component features a 20V drain-source voltage and a continuous drain current of 50A at 25°C (Tc). It offers a low on-resistance of 3.4 mOhm maximum at 18.3A and 10V Vgs. The device is housed in a 10-PolarPAK® (S) package, suitable for demanding applications. Power dissipation is rated at 5.2W (Ta) and 104W (Tc). Key electrical parameters include a gate charge of 78 nC maximum at 10V Vgs and an input capacitance of 4200 pF maximum at 10V Vds. Operating temperature range is -55°C to 150°C. This component is commonly utilized in power supply designs, automotive electronics, and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (S) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 18.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (S) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 10 V |
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