SIE822DF-T1-E3
MOSFET N-CH 20V 50A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SIE822DF-T1-E3 is a TrenchFET® N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 50A at 25°C (Tc). With a low on-resistance of 3.4mOhm maximum at 18.3A and 10V Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key electrical parameters include a maximum gate charge (Qg) of 78 nC and input capacitance (Ciss) of 4200 pF, both specified at 10V. Rated for a maximum junction temperature of 150°C, it offers significant power dissipation capabilities of 104W (Tc) and 5.2W (Ta). This MOSFET is housed in a 10-PolarPAK® (S) surface mount package and supplied on tape and reel. It finds application in automotive, industrial, and consumer electronics sectors requiring robust power management solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (S) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 18.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (S) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 10 V |
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