SIE820DF-T1-GE3
MOSFET N-CH 20V 50A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIE820DF-T1-GE3, a N-Channel TrenchFET® MOSFET, offers a 20V drain-source voltage and a continuous drain current of 50A at 25°C (Tc). This surface mount component features a maximum Rds(on) of 3.5mOhm at 18A and 4.5V, with a gate drive voltage range of 2.5V to 4.5V. Key parameters include a maximum gate charge (Qg) of 143 nC and input capacitance (Ciss) of 4300 pF at 10V. The device has a power dissipation of 5.2W (Ta) and 104W (Tc), with an operating temperature range of -55°C to 150°C (TJ). Packaged in a 10-PolarPAK® (S) on tape and reel, this MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (S) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 18A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (S) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 143 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 10 V |
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