Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

SIE818DF-T1-GE3

Banner
productimage

SIE818DF-T1-GE3

MOSFET N-CH 75V 60A 10POLARPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SIE818DF-T1-GE3 TrenchFET® N-Channel Power MOSFET. This 75V device boasts a continuous drain current of 60A at 25°C (Tc) and a maximum Rds(on) of 9.5mOhm at 16A and 10V. Featuring a 10-PolarPAK® (L) surface mount package, it offers excellent thermal performance with 125W power dissipation at 25°C (Tc). Key parameters include a gate charge (Qg) of 95 nC at 10V and input capacitance (Ciss) of 3200 pF at 38V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for applications in automotive and industrial power management systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case10-PolarPAK® (L)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs9.5mOhm @ 16A, 10V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package10-PolarPAK® (L)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3200 pF @ 38 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
SI2365EDS-T1-GE3

MOSFET P-CH 20V 5.9A TO236

product image
SI2302CDS-T1-E3

MOSFET N-CH 20V 2.6A SOT23-3

product image
SIA449DJ-T1-GE3

MOSFET P-CH 30V 12A PPAK SC70-6