SIE818DF-T1-E3
MOSFET N-CH 75V 60A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIE818DF-T1-E3 is an N-Channel power MOSFET designed for high-efficiency power conversion applications. This component features a Drain-Source Voltage (Vdss) of 75V and a continuous Drain current (Id) of 60A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 9.5mOhm at 16A and 10V Vgs. With a gate charge (Qg) of 95 nC (Max) at 10V Vgs and input capacitance (Ciss) of 3200 pF (Max) at 38V Vds, it is engineered for optimized switching performance. The device offers a power dissipation capability of 5.2W (Ta) and 125W (Tc), with a junction temperature range of -55°C to 150°C. It is delivered in a 10-PolarPAK® (L) package suitable for surface mounting and supplied on tape and reel. This MOSFET is utilized in automotive and industrial power supply designs.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (L) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (L) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 38 V |
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