SIE812DF-T1-GE3
MOSFET N-CH 40V 60A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIE812DF-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This device features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 60A at 25°C (Tc). With a low on-resistance (Rds On) of 2.6mOhm maximum at 25A and 10V Vgs, it minimizes conduction losses. The SIE812DF-T1-GE3 offers a maximum power dissipation of 125W at 25°C (Tc) and 5.2W at 25°C (Ta). It utilizes a 10-PolarPAK® (L) surface mount package, suitable for demanding applications in industrial, automotive, and renewable energy sectors. Key electrical parameters include a gate charge (Qg) of 170 nC maximum at 10V Vgs and an input capacitance (Ciss) of 8300 pF maximum at 20V Vds. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (L) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (L) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8300 pF @ 20 V |
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