SIE810DF-T1-GE3
MOSFET N-CH 20V 60A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIE810DF-T1-GE3 is an N-Channel TrenchFET® MOSFET designed for high-performance power applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 60A at 25°C (Tc). With a low on-resistance (Rds On) of 1.4mOhm maximum at 25A and 10V, it minimizes conduction losses. The device supports gate drive voltages from 2.5V to 10V, with a maximum gate-source voltage (Vgs) of ±12V. Key parameters include a maximum gate charge (Qg) of 300 nC at 10V and input capacitance (Ciss) of 13000 pF at 10V. Power dissipation is rated at 5.2W (Ta) and 125W (Tc). The SIE810DF-T1-GE3 is housed in a 10-PolarPAK® (L) surface-mount package and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in automotive and industrial power management systems. It is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (L) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (L) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 10 V |
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