SIE808DF-T1-GE3
MOSFET N-CH 20V 60A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIE808DF-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series, designed for high-efficiency power switching applications. This component features a 20V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 60A at 25°C (Tc). With a low on-resistance (Rds On) of 1.6mOhm maximum at 25A and 10V Vgs, it minimizes conduction losses. The device operates with gate drive voltages between 4.5V and 10V and has a maximum gate charge (Qg) of 155 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 8800 pF at 10V. The SIE808DF-T1-GE3 offers significant power dissipation capabilities, rated at 125W (Tc) and 5.2W (Ta), and is packaged in a 10-PolarPAK® (L) for surface mounting, supplied on tape and reel. Its robust thermal performance and low switching losses make it suitable for use in automotive, industrial, and consumer electronics power management systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (L) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (L) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 10 V |
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