SIE808DF-T1-E3
MOSFET N-CH 20V 60A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIE808DF-T1-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This device features a 20V drain-source breakdown voltage and a continuous drain current of 60A at 25°C (Tc). With a maximum on-resistance of 1.6mOhm at 25A and 10V Vgs, it offers low conduction losses. The MOSFET is designed for surface mount applications in a 10-PolarPAK® (L) package, supplied on tape and reel. Key parameters include a gate charge of 155nC (max) at 10V Vgs and input capacitance of 8800pF (max) at 10V Vds. Power dissipation capabilities are 5.2W (Ta) and 125W (Tc). Operating temperature range is -55°C to 150°C. This component is suitable for high-efficiency power conversion and management applications across various industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (L) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (L) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 10 V |
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