SIE804DF-T1-GE3
MOSFET N-CH 150V 37A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIE804DF-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 150V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 37A at 25°C (Tc). The low on-resistance of 38mOhm is achieved at 7.6A and a gate-source voltage (Vgs) of 10V. With a maximum power dissipation of 125W at 25°C (Tc), it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 105 nC at 10V and input capacitance (Ciss) of 3000 pF at 50V. The SIE804DF-T1-GE3 utilizes a surface mount 10-PolarPAK® (LH) package and operates across a temperature range of -55°C to 150°C. This component is commonly integrated into power supplies, motor control systems, and battery management solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (LH) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 7.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (LH) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 50 V |