SIE802DF-T1-E3
MOSFET N-CH 30V 60A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIE802DF-T1-E3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C (Tc). The low on-resistance of 1.9mOhm maximum at 23.6A and 10V Vgs is achieved through advanced trench technology. Key parameters include a gate charge of 160nC maximum at 10V Vgs and input capacitance of 7000pF maximum at 15V Vds. The SIE802DF-T1-E3 offers significant power dissipation capabilities, rated at 5.2W ambient (Ta) and 125W case (Tc). It is supplied in a 10-PolarPAK® (L) surface mount package, on tape and reel (TR), and operates across a temperature range of -55°C to 150°C. This component is utilized in automotive, industrial, and server power supply designs.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (L) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 23.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (L) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 15 V |
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