SIE800DF-T1-E3
MOSFET N-CH 30V 50A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SIE800DF-T1-E3, offers robust performance for demanding applications. This surface mount device features a 30V drain-source voltage and a continuous drain current capability of 50A at 25°C (Tc). With a low Rds(on) of 7.2mOhm maximum at 11A and 10V Vgs, it minimizes conduction losses. The SIE800DF-T1-E3 is housed in a 10-PolarPAK® (S) package, delivering exceptional thermal management with a power dissipation of 104W at 25°C (Tc). Key electrical characteristics include a maximum gate charge of 35 nC at 10V and an input capacitance of 1600 pF at 15V. This component is suitable for high-power switching applications across various industries including automotive and industrial power systems. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (S) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (S) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 15 V |
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