SIE726DF-T1-GE3
MOSFET N-CH 30V 60A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIE726DF-T1-GE3 is an N-Channel Power MOSFET from the SkyFET® and TrenchFET® series, designed for high-efficiency power conversion. This component features a 30V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 60A (Tc) at 25°C. The low on-resistance of 2.4mOhm (max) at 25A and 10V Vgs, coupled with a 4.5V gate drive voltage, optimizes performance. Key electrical characteristics include a maximum gate charge (Qg) of 160 nC at 10V and input capacitance (Ciss) of 7400 pF (max) at 15V. With a maximum power dissipation of 125W (Tc), this MOSFET is suitable for demanding applications. The device is housed in a 10-PolarPAK® (L) package for surface mounting and operates across a temperature range of -55°C to 150°C (TJ). This component is commonly utilized in automotive, industrial, and power supply applications.
Additional Information
Series: SkyFET®, TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (L) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (L) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7400 pF @ 15 V |