SIDR870ADP-T1-GE3
MOSFET N-CH 100V 95A PPAK SO-8DCManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-CH 100V 95A PPAK SO-8DC, part number SIDR870ADP-T1-GE3, is a TrenchFET® series N-channel power MOSFET designed for demanding applications. This device features a 100V drain-to-source voltage and a continuous drain current of 95A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). Optimized for efficiency, it offers a low on-resistance of 6.6mOhm at 20A and 10V. Drive voltage ranges from 4.5V to 10V, and the device exhibits a gate charge of 80nC at 10V and input capacitance of 2866pF at 50V. The SIDR870ADP-T1-GE3 is housed in a surface mount PowerPAK® SO-8DC package, suitable for applications in automotive and industrial power management. Operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8DC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2866 pF @ 50 V |
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