SIDR638DP-T1-RE3
N-CHANNEL 40-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIDR638DP-T1-RE3 is an N-Channel Power MOSFET from the TrenchFET® Gen IV series. This component features a 40 V drain-to-source voltage and a continuous drain current capability of 64.6 A at 25°C ambient and 100 A at 25°C case temperature. The device exhibits a low on-resistance of 0.88 mOhm maximum at 20 A and 10 V Vgs. It is packaged in a PowerPAK® SO-8DC surface mount package and supplied on tape and reel. Key electrical parameters include a maximum gate charge (Qg) of 204 nC at 10 V and an input capacitance (Ciss) of 10500 pF maximum at 20 V. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications requiring high power density and efficient switching.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64.6A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.88mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8DC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 204 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 20 V |
Request a Quote
Clients Also Buy
SISA24DN-T1-GE3
MOSFET N-CH 25V 60A PPAK1212-8
SISS06DN-T1-GE3
MOSFET N-CH 30V 47.6/172.6A PPAK
SIRA58ADP-T1-RE3
MOSFET N-CH 40V 32.3A/109A PPAK
