SIDR638DP-T1-GE3
MOSFET N-CH 40V 100A PPAK SO-8DCManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIDR638DP-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® Gen IV series. This device features a 40V drain-source breakdown voltage and supports a continuous drain current of 100A at 25°C with a maximum power dissipation of 125W (Tc). The low on-resistance is specified as 0.88mOhm maximum at 20A and 10V gate-source voltage. It utilizes a PowerPAK® SO-8DC surface mount package for efficient thermal management. Key parameters include a gate charge of 204 nC maximum at 10V Vgs and an input capacitance of 10500 pF maximum at 20V Vds. The operating temperature range is -55°C to 150°C. This component is commonly found in automotive and industrial power switching applications.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.88mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8DC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 204 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 20 V |
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