SIDR626LEP-T1-RE3
N-CHANNEL 60 V (D-S) 175C MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 60 V 48.7A (Ta), 218A (Tc) 7.5W (Ta), 150W (Tc) Surface Mount PowerPAK® SO-8DC
Additional Information
Series: TrenchFET® Gen IVRoHS Status: unknownManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48.7A (Ta), 218A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.5W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8DC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5900 pF @ 30 V |
Request a Quote
Clients Also Buy
SISA24DN-T1-GE3
MOSFET N-CH 25V 60A PPAK1212-8
SISS06DN-T1-GE3
MOSFET N-CH 30V 47.6/172.6A PPAK
SIRA58ADP-T1-RE3
MOSFET N-CH 40V 32.3A/109A PPAK
