SIDR622DP-T1-GE3
MOSFET N-CH 150V 64.6A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIDR622DP-T1-GE3, a TrenchFET® series N-Channel Power MOSFET, features a 150V drain-source breakdown voltage and a continuous drain current capability of 56.7A at 25°C case temperature. This device offers a low on-resistance of 17.7mOhm maximum at 20A and 10V Vgs. Designed for efficient power management, it boasts a maximum power dissipation of 125W at 25°C case temperature and 6.25W at 25°C ambient temperature. The SIDR622DP-T1-GE3 is housed in a PowerPAK® SO-8DC package, suitable for surface mounting. Key electrical characteristics include a gate charge of 41nC maximum at 10V Vgs and input capacitance of 1516pF maximum at 75V Vds. This component finds application in high-power switching, power supplies, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 17.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8DC |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1516 pF @ 75 V |
| Qualification | - |
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