SIDR610EP-T1-RE3
N-CHANNEL 200 V (D-S) 175C MOSFEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIDR610EP-T1-RE3 is an N-Channel Power MOSFET from the TrenchFET® series, designed for demanding applications. This device features a maximum drain-source voltage (Vdss) of 200V and offers a continuous drain current (Id) of 8.9A at 25°C ambient temperature, escalating to 39.6A under thermal management (Tc). The on-resistance (Rds On) is specified at a maximum of 31.9mOhm at 10A and 10V gate-source voltage.
With a maximum power dissipation of 7.5W (Ta) and 150W (Tc), the SIDR610EP-T1-RE3 is suitable for high-power switching applications. The operating junction temperature range is -55°C to 175°C, ensuring robustness in challenging environments. Key characteristics include a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 1380 pF at 100V. Packaged in a PowerPAK® SO-8DC, this component is supplied on tape and reel. Its specifications make it well-suited for use in power supply units, motor control, and industrial power conversion systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta), 39.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 31.9mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.5W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8DC |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 100 V |
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