SIDR610DP-T1-GE3
MOSFET N-CH 200V 8.9A/39.6A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIDR610DP-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This device features a 200V Drain-to-Source Voltage (Vdss) and offers continuous drain current capabilities of 8.9A at 25°C ambient temperature (Ta) and 39.6A at 25°C case temperature (Tc). Maximum power dissipation is rated at 6.25W (Ta) and 125W (Tc). The device exhibits a maximum Rds(on) of 31.9mOhm at 10A and 10V Vgs, with a recommended drive voltage range of 7.5V to 10V. Key electrical parameters include a maximum gate charge (Qg) of 38 nC at 10V Vgs and a maximum input capacitance (Ciss) of 1380 pF at 100V Vds. The SIDR610DP-T1-GE3 is housed in a PowerPAK® SO-8 package suitable for surface mounting and operates across a temperature range of -55°C to 150°C. This component is utilized in applications such as power supplies, motor control, and server power systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta), 39.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 31.9mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8DC |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 100 V |
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