SIDR608EP-T1-RE3
N-CHANNEL 45 V (D-S) 175C MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIDR608EP-T1-RE3 is a TrenchFET® series N-Channel MOSFET designed for high-power applications. This component features a 45V drain-source voltage and a continuous drain current of 56A at ambient temperature (Ta) and 228A at case temperature (Tc). The device offers a low on-resistance of 1.2mOhm at 20A and 10V Vgs. With a maximum power dissipation of 7.5W (Ta) and 125W (Tc), it operates reliably across a wide temperature range of -55°C to 175°C. The SIDR608EP-T1-RE3 is housed in a PowerPAK® SO-8 package, suitable for surface mounting and supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 167 nC at 10V and input capacitance (Ciss) of 8900 pF at 20V. Drive voltages range from 4.5V to 10V. This MOSFET is utilized in power management, automotive, and industrial applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Ta), 228A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.5W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8DC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 167 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8900 pF @ 20 V |
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