SIDR608DP-T1-RE3
MOSFET N-CH 45V 51A/208A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIDR608DP-T1-RE3 is a TrenchFET® Gen IV N-Channel Power MOSFET designed for demanding power applications. This component features a 45V drain-source breakdown voltage and offers continuous drain current capabilities of 51A at ambient temperature and 208A at case temperature. With a maximum Rds(on) of 1.2mOhm at 20A and 10V gate drive, it ensures efficient power transfer. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of +20V and -16V. Key electrical characteristics include a maximum gate charge of 167 nC at 10V and input capacitance of 8900 pF at 20V. The PowerPAK® SO-8DC package facilitates efficient thermal management, providing 6.25W dissipation at ambient and 104W at case temperature. Operating reliably from -55°C to 150°C, this MOSFET is suitable for automotive, industrial power supply, and power management systems.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Ta), 208A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8DC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 167 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8900 pF @ 20 V |
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