SIDR5802EP-T1-RE3
N-CHANNEL 80 V (D-S) 175C MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIDR5802EP-T1-RE3 is an N-Channel TrenchFET® Gen V Power MOSFET designed for high-efficiency power conversion applications. This device features an 80V drain-to-source voltage rating and offers a low on-resistance of 2.9mOhm at 20A and 10V Vgs. It supports continuous drain currents of up to 34.2A at 25°C ambient and 153A at 25°C case temperature. The component is housed in a PowerPAK® SO-8DC surface mount package, enabling efficient thermal management with a maximum power dissipation of 7.5W (ambient) and 150W (case). Key electrical characteristics include a maximum gate charge of 60 nC at 10V Vgs and input capacitance of 3020 pF at 40V Vds. Operating temperature ranges from -55°C to 175°C. This MOSFET is suitable for use in demanding applications across automotive, industrial, and consumer electronics sectors.
Additional Information
Series: TrenchFET® Gen VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34.2A (Ta), 153A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.5W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8DC |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3020 pF @ 40 V |
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