SIDR578EP-T1-RE3
N-CHANNEL 150 V (D-S) 175C MOSFEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIDR578EP-T1-RE3 is an N-Channel Power MOSFET from the TrenchFET® Gen V series. This device features a Drain-to-Source Voltage (Vdss) of 150V and a continuous drain current capability of 17.4A at 25°C ambient and 78A at 25°C case temperature. The Vishay Siliconix SIDR578EP-T1-RE3 offers a low on-resistance of 8.8mOhm maximum at 20A and 10V Vgs. With a maximum junction operating temperature of 175°C and a power dissipation of 150W (Tc), it is suitable for demanding power applications. The component is supplied in a Surface Mount PowerPAK® SO-8DC package, facilitating efficient thermal management. This MOSFET is commonly utilized in industrial, automotive, and power supply applications where high efficiency and robust performance are critical.
Additional Information
Series: TrenchFET® Gen VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.4A (Ta), 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.5W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8DC |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2540 pF @ 75 V |
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