SIDR570EP-T1-RE3
N-CHANNEL 150 V (D-S) 175C MOSFEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SIDR570EP-T1-RE3 is an N-Channel Power MOSFET from the TrenchFET® Gen V series. This device features a high continuous drain current capability of 30.8A at 25°C ambient and 90.9A at 25°C case temperature, with a maximum drain-source voltage of 150V. Its low on-resistance is specified at 7.9mOhm maximum at 20A and 10V Vgs. Designed for elevated operating temperatures up to 175°C, it offers a maximum power dissipation of 7.5W (ambient) and 150W (case). Key electrical parameters include a maximum gate charge of 71 nC at 10V and input capacitance of 3740 pF at 75V Vds. The device is housed in a PowerPAK® SO-8DC surface mount package and supplied on tape and reel. This component is suitable for applications in power supply, automotive, and industrial sectors demanding high efficiency and thermal performance.
Additional Information
Series: TrenchFET® Gen VRoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta), 90.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.5W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8DC |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3740 pF @ 75 V |
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