SIDR510EP-T1-RE3
N-CHANNEL 100 V (D-S) 175C MOSFEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SIDR510EP-T1-RE3 is an N-Channel Power MOSFET from the TrenchFET® Gen V series. This device offers a 100V drain-to-source voltage (Vdss) and supports continuous drain currents of 33A at 25°C ambient and 148A at 25°C case temperature. It features a low on-resistance (Rds On) of 3.6mOhm at 20A and 10V Vgs. The maximum power dissipation is 7.5W (Ta) and 150W (Tc). Key parameters include a maximum gate charge (Qg) of 81 nC and input capacitance (Ciss) of 4980 pF. Designed for demanding applications, this MOSFET operates in a wide temperature range of -55°C to 175°C (TJ). The component is housed in a surface mount PowerPAK® SO-8DC package and is supplied on tape and reel. This Vishay Siliconix MOSFET is suitable for power management solutions in industrial and automotive sectors.
Additional Information
Series: TrenchFET® Gen VRoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta), 148A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.5W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8DC |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4980 pF @ 50 V |
Request a Quote
Clients Also Buy
SISS54DN-T1-GE3
N-CHANNEL 30-V (D-S) MOSFET POWE
SIDR5802EP-T1-RE3
N-CHANNEL 80 V (D-S) 175C MOSFET
SIR500DP-T1-RE3
N-CHANNEL 30 V (D-S) 150C MOSFET
