SIDR5102EP-T1-RE3
N-CHANNEL 100 V (D-S) 175C MOSFEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIDR5102EP-T1-RE3 is an N-channel Power MOSFET from the TrenchFET® Gen V series. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 28.2 A at 25°C ambient and 126 A at 25°C case temperature. The device exhibits a maximum on-resistance (Rds On) of 4.1 mOhm at 20 A and 10 V gate-source voltage. With a maximum junction temperature of 175°C, it offers a power dissipation of 7.5 W (ambient) and 150 W (case). The SIDR5102EP-T1-RE3 is supplied in a PowerPAK® SO-8DC surface-mount package, compatible with tape and reel packaging. Its robust thermal performance and low on-resistance make it suitable for applications in industrial power supplies, automotive systems, and high-efficiency power conversion.
Additional Information
Series: TrenchFET® Gen VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28.2A (Ta), 126A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.5W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8DC |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2850 pF @ 50 V |
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