SIDR402EP-T1-RE3
N-CHANNEL 40 V (D-S) 175C MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix N-Channel MOSFET, part number SIDR402EP-T1-RE3, from the TrenchFET® series. This device offers a 40V drain-source voltage and features a low on-resistance of 0.88mOhm at 20A and 10V Vgs. It supports a continuous drain current of 65.2A at 25°C ambient and 291A at 25°C case temperature. The PowerPAK® SO-8DC package facilitates efficient thermal management, with a maximum power dissipation of 7.5W (ambient) and 150W (case). Key parameters include a gate charge (Qg) of 165 nC and input capacitance (Ciss) of 9100 pF. Operating temperature range is -55°C to 175°C. This component is suitable for high-power switching applications in automotive and industrial power supplies.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65.2A (Ta), 291A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.88mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.5W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8DC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9100 pF @ 20 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
