SIB800EDK-T1-GE3
MOSFET N-CH 20V 1.5A PPAK SC75-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix LITTLE FOOT® SIB800EDK-T1-GE3 is an N-Channel Power MOSFET designed for efficient power management. This component features a 20 V drain-source voltage and a continuous drain current of 1.5 A at 25°C (Tc). With a maximum Rds(on) of 225 mOhm at 1.6 A and 4.5 V, it offers low conduction losses. The device is housed in a PowerPAK® SC-75-6 surface mount package, enabling high power density. Key specifications include a maximum gate charge of 1.7 nC at 4.5 V and a maximum gate-source voltage of ±6 V. The SIB800EDK-T1-GE3 includes an integrated Schottky diode, simplifying circuit design. It is suitable for applications in consumer electronics and industrial power solutions. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-75-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 225mOhm @ 1.6A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.1W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-75-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±6V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.7 nC @ 4.5 V |
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