SIB456DK-T1-GE3
MOSFET N-CH 100V 6.3A PPAK SC75Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIB456DK-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This component features a Drain to Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 6.3 A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 185 mOhm at 1.9 A and 10 V, it offers efficient power switching. The device is housed in a compact PowerPAK® SC-75-6 surface mount package, supporting high power dissipation of 13 W (Tc) and 2.4 W (Ta). Key electrical characteristics include a gate charge (Qg) of 5 nC at 10 V and input capacitance (Ciss) of 130 pF at 50 V. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for use in power management, automotive, and industrial systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-75-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SC-75-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 50 V |
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