SIB455EDK-T1-GE3
MOSFET P-CH 12V 9A PPAK SC75-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel Power MOSFET, part number SIB455EDK-T1-GE3, from the TrenchFET® series. This device features a Drain-to-Source Voltage (Vdss) of 12V and a continuous drain current (Id) of 9A at 25°C (Tc). The Rds(On) is specified at a maximum of 27mOhm at 5.6A with a Vgs of 4.5V, with a drive voltage range from 1.5V to 4.5V. The Gate Charge (Qg) is a maximum of 30 nC at 8V. This MOSFET is housed in a PowerPAK® SC-75-6 surface mount package, offering excellent thermal performance with a power dissipation of 2.4W (Ta) and 13W (Tc). The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in industrial, automotive, and consumer electronics applications requiring efficient power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-75-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-75-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 8 V |
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