SIB437EDKT-T1-GE3
MOSFET P-CH 8V 9A PPAK TSC75-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SIB437EDKT-T1-GE3, is engineered for demanding applications. This device features an 8V Drain-Source Voltage (Vdss) and a continuous drain current capability of 9A (Tc) at 25°C. The P-Channel MOSFET technology offers a low on-resistance of 34mOhm maximum at 3A and 4.5V (Vgs). Key characteristics include a maximum gate charge of 16 nC at 4.5V and a gate threshold voltage of 700mV at 250µA. Power dissipation is rated at 2.4W (Ta) and 13W (Tc). The SIB437EDKT-T1-GE3 is housed in a PowerPAK® TSC-75-6 surface mount package, supplied on tape and reel. This component finds application in power management, battery charging, and load switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® TSC-75-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | PowerPAK® TSC75-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 4.5 V |
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