SIB417AEDK-T1-GE3
MOSFET P-CH 8V 9A PPAK SC75-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET SIB417AEDK-T1-GE3 is optimized for power management applications. This device features a 8V drain-source breakdown voltage and a continuous drain current of 9A at 25°C (Tc). With a low on-resistance of 32mOhm maximum at 3A and 4.5V Vgs, it minimizes conduction losses. The PowerPAK® SC-75-6 package offers excellent thermal performance with a maximum power dissipation of 13W at 25°C (Tc). Key electrical characteristics include a gate charge (Qg) of 18.5 nC maximum at 5V Vgs and input capacitance (Ciss) of 878 pF maximum at 4V Vds. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for use in automotive and industrial power control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-75-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-75-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 878 pF @ 4 V |
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