SIB415DK-T1-GE3
MOSFET P-CH 30V 9A PPAK SC75-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIB415DK-T1-GE3 is a P-Channel MOSFET from the TrenchFET® series, packaged in a PowerPAK® SC-75-6. This device offers a 30V drain-to-source voltage rating and can handle a continuous drain current of 9A at 25°C (Tc). The SIB415DK-T1-GE3 features a maximum on-resistance of 87mOhm at 4.17A and 10V Vgs. With a maximum gate charge of 10.05 nC at 10V, it is designed for efficient switching. Power dissipation is rated at 13W (Tc) and 2.4W (Ta). This component is commonly utilized in power management applications across automotive and industrial sectors. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-75-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 4.17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SC-75-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.05 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 15 V |
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