SIB414DK-T1-GE3
MOSFET N-CH 8V 9A PPAK SC75-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIB414DK-T1-GE3 is an N-Channel TrenchFET® MOSFET designed for high-efficiency power management applications. This device features a drain-source voltage (Vdss) of 8V and a continuous drain current (Id) of 9A at 25°C (Tc). The low on-resistance (Rds On) of 26mOhm at 7.9A and 4.5V gate drive, along with a typical gate charge (Qg) of 14.03 nC at 5V, contributes to minimized conduction and switching losses.
The SIB414DK-T1-GE3 is housed in a PowerPAK® SC-75-6 package, enabling efficient heat dissipation with a maximum power dissipation of 13W (Tc). This component is suitable for demanding applications in automotive, industrial, and consumer electronics sectors requiring robust power switching. Operating temperature range is -55°C to 150°C. Drive voltage ranges from 1.2V to 4.5V with a maximum gate-source voltage (Vgs) of ±5V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-75-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 7.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-75-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.03 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 732 pF @ 4 V |