SIB413DK-T1-GE3
MOSFET P-CH 20V 9A PPAK SC75-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, SIB413DK-T1-GE3, from the TrenchFET® series, offers a 20V drain-source voltage capability and a continuous drain current of 9A (Tc). This component features a low on-resistance of 75mOhm at 6.5A and 4.5V gate-source voltage. The device is housed in a PowerPAK® SC-75-6 package for efficient surface mounting, with a maximum power dissipation of 13W (Tc). Key electrical characteristics include a gate charge of 7.63 nC at 5V and input capacitance of 357 pF at 10V. The SIB413DK-T1-GE3 is suitable for applications in power management, consumer electronics, and industrial automation. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-75-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 6.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® SC-75-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.63 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 357 pF @ 10 V |