SIB412DK-T1-GE3
MOSFET N-CH 20V 9A PPAK SC75-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® series N-Channel MOSFET, part number SIB412DK-T1-GE3, offers a 20V drain-source voltage with a continuous drain current of 9A at 25°C (Tc). This surface mount device in a PowerPAK® SC-75-6 package features a maximum Rds(on) of 34mOhm at 6.6A and 4.5V Vgs. Key parameters include a gate charge (Qg) of 10.16 nC at 5V and input capacitance (Ciss) of 535 pF at 10V Vds. The device supports drive voltages from 1.8V to 4.5V and operates across a wide temperature range of -55°C to 150°C (TJ). Maximum power dissipation is rated at 2.4W (Ta) and 13W (Tc). This component is commonly utilized in power management, automotive, and industrial applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-75-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 6.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-75-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.16 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 10 V |