SIB412DK-T1-E3
MOSFET N-CH 20V 9A PPAK SC75-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIB412DK-T1-E3 is an N-channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C (Tc). The device exhibits a low on-resistance of 34mOhm maximum at 6.6A and 4.5V Vgs. It offers a maximum gate charge (Qg) of 10.16 nC at 5V and an input capacitance (Ciss) of 535 pF maximum at 10V. The SIB412DK-T1-E3 is packaged in a PowerPAK® SC-75-6 surface mount configuration, suitable for demanding thermal management requirements with a power dissipation of 13W (Tc). Its operating temperature range is -55°C to 150°C. This MOSFET is utilized in industries such as consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-75-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 6.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-75-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.16 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 10 V |
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