SIB411DK-T1-GE3
MOSFET P-CH 20V 9A PPAK SC75-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SIB411DK-T1-GE3, offers a 20V drain-source breakdown voltage and 9A continuous drain current at 25°C (Tc). This device features a low on-resistance of 66mOhm maximum at 3.3A and 4.5V Vgs, with a gate threshold voltage of 1V maximum at 250µA. The PowerPAK® SC-75-6 package provides robust thermal performance with a maximum power dissipation of 13W at 25°C (Tc). Key electrical parameters include a 15 nC maximum gate charge at 8V Vgs and 470 pF maximum input capacitance at 10V Vds. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for applications in automotive, industrial, and consumer electronics requiring efficient power switching. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-75-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 66mOhm @ 3.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-75-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 10 V |