SIB411DK-T1-E3
MOSFET P-CH 20V 9A PPAK SC75-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel MOSFET, SIB411DK-T1-E3, from the TrenchFET® series. This device features a 20V drain-source breakdown voltage and a continuous drain current (Id) of 9A at 25°C (Tc). The Rds(On) is specified at a maximum of 66mOhm at 3.3A and 4.5V Vgs. Designed for surface mounting, it utilizes the PowerPAK® SC-75-6 package. Key parameters include a gate charge (Qg) of 15 nC maximum at 8V Vgs and input capacitance (Ciss) of 470 pF maximum at 10V Vds. Power dissipation is 2.4W (Ta) and 13W (Tc). This component is suitable for applications requiring efficient power switching in automotive and industrial sectors. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-75-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 66mOhm @ 3.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-75-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 10 V |
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