SIB410DK-T1-GE3
MOSFET N-CH 30V 9A PPAK SC75-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIB410DK-T1-GE3 is an N-Channel Power MOSFET with a 30V drain-source breakdown voltage. It offers a continuous drain current of 9A at 25°C (Tc) and a maximum on-resistance of 42mOhm at 3.8A and 4.5V Vgs. This device features a low gate charge of 15nC at 8V Vgs and an input capacitance of 560pF at 15V Vds. The SIB410DK-T1-GE3 is housed in a PowerPAK SC-75-6 surface-mount package, delivering up to 13W of power dissipation at 25°C (Tc). Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power management, automotive systems, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-75-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 3.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 13W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-75-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 15 V |
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