SIB408DK-T1-GE3
MOSFET N-CH 30V 7A PPAK SC75-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIB408DK-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 7A at 25°C (Tc). The PowerPAK® SC-75-6 package offers excellent thermal performance, with a power dissipation of 13W at 25°C (Tc) and 2.4W at 25°C (Ta). Key electrical characteristics include a maximum Rds(on) of 40mOhm at 6A and 10V, and a gate charge of 9.5 nC at 10V. Input capacitance (Ciss) is specified at 350 pF maximum at 15V. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for use in automotive, industrial power, and consumer electronics. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-75-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SC-75-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 15 V |